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| Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 0.650.15 Unit: mm 2.8 -0.3 +0.2 1.5 -0.05 +0.25 0.650.15 s Features 0.95 q q q Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 25 20 12 1 0.5 200 150 -55 ~ +150 V V V A A mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : 1D s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Cob Ron*3 Conditions VCB = 25V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 IC = 0.5A, IB = 20mA*2 IC = 0.5A, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 10 1.0 *2 min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 Parameter Symbol Ratings Unit 1.1 -0.1 max 100 0.16 -0.06 s Absolute Maximum Ratings 2 (Ta=25C) +0.2 +0.1 0.4 -0.05 +0.1 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 2.9 -0.05 1 1.90.2 +0.2 0.95 3 1.45 Unit nA V V V 25 20 12 200 0.13 800 0.4 1.2 V V MHz pF Pulse measurement *1h FE Rank classification Rank hFE R 200 ~ 350 1DR S 300 ~ 500 1DS T 400 ~ 800 1DT *3R on Measurement circuit 1k IB=1mA f=1kHz V=0.3V Marking Symbol VB VV VA Ron= VB !1000() VA-VB 1 Transistor PC -- Ta 240 1.2 IB=4.0mA 200 1.0 Ta=25C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 2SD1328 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=25 Collector power dissipation PC (mW) 160 120 80 40 0 0 20 40 60 80 100 120 140 160 Collector current IC (A) 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 1200 VCE=2V 400 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 1000 Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Forward current transfer ratio hFE 350 300 250 200 150 100 50 800 Ta=75C 600 25C -25C 400 200 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob -- VCB 24 Collector output capacitance Cob (pF) 20 IE=0 Ta=25C f=1MHz 16 12 8 4 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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